Effect of PN Passivation on MOSFETs Performance in 28 nm FD-SOI
(2025) EuroSOI-ULIS — Location: Warsaw (14.May.2025)
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- Abstract
- This work investigates, for the first time, how the PN passivation introduced in the FDSOI substrate just below the BOX to improve substrate performance in 28 nm FD-SOI technology affects active MOSFET parameters. DC performance and low-frequency noise (LFN) of MOSFETs are studied for different substrate resistivities and implant parameters. It is demonstrated that PN passivation impacts the device performance via modification of the back-gate realization.
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Citations
Vanbrabant, M., Rack, M., Cathelin, A., Raskin, J.-P., & Kilchytska, V. (2025, May). Effect of PN Passivation on MOSFETs Performance in 28 nm FD-SOI. EuroSOI-ULIS, Warsaw. https://hdl.handle.net/2078.5/280663