Traps and radio-frequency characterization of polysilicon layer on high resistivity silicon substrate
(2026) Solid-State Electronics — Vol. 231, p. 109269 (2026)
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- Authors
Vandermolen, Eric 
Ferrandis, Philippe Allibert, Frédéric Cassé, Mikaël
- Abstract
- (en) In this work, radio-frequency and traps properties of unintentionally doped polycrystalline silicon (polySi) deposited by low pressure chemical vapor deposition (LPCVD) on high resistivity silicon (HR-Si) substrate are characterized. Both volume (i.e. inside polySi) and interface traps (i.e. near polySi/HR-Si) are detected by photo-induced current transient spectroscopy (PICTS). A thermal budget of 900 °C during 2 h is sufficient to observe trap densities reduction near the polySi/HR-Si interface, affecting the RF performance of the fabricated substrates.
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Citations
Vandermolen, E., Ferrandis, P., Allibert, F., Augendre, E., Nabet, M., Rack, M., Raskin, J.-P., & Cassé, M. (2026). Traps and radio-frequency characterization of polysilicon layer on high resistivity silicon substrate. Solid-State Electronics, 231, 109269. https://doi.org/10.1016/j.sse.2025.109269 (Original work published 2026)