Thermal coupling between FD-SOI FETs at cryogenic temperatures
(2025) Solid-State Electronics — Vol. 227, p. 109132 (2025)
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- Abstract
- This work studies the thermal cross-coupling between two side-by-side FD-SOI MOSFETs at liquid nitrogen temperature in comparison to the room temperature one. The temperature rise experienced by a device due to the self-heating of a neighbor one is estimated by making a comparison to a referenced gm/Id curve as a function of chuck temperature. The impact of thermal coupling effects is studied on main digital (SS, Vth, Ion, Ioff and Ion/Ioff) and analog (gm and gm/Id) figures of merit. We demonstrate that electrical parameters degradation caused by the operation (heating) of the neighbor device can be up to 50 % more important at 77 K than at 295 K.
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Citations
Vanbrabant, M., Raskin, J.-P., & Kilchytska, V. (2025). Thermal coupling between FD-SOI FETs at cryogenic temperatures. Solid-State Electronics, 227, 109132. https://doi.org/10.1016/j.sse.2025.109132 (Original work published 2025)