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Stochasticity-awaremodelingmethodologyofmottmemristorsvalidatedonvanadiumdioxidedevices.pdf
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Volatile memristors based on Mott insulators, such as vanadium dioxide (VO2), are envisaged as key components for neuromorphic computing e.g. to implement the Hodgkin-Huxley model. A deterministic electro-thermal model known as the Picket-Williams (PW) model is adapted to our micro-fabricated VO2-based memristors. The tuned model accurately captures the experimental memristive behaviors of our device for different operating temperatures (35 and 45 °C). The transitions voltages and current of the reversible metal-insulator transitions are notably well reproduced. We further establish the mathematical relations between the fluctuations of the intrinsic material parameters and the cycle-to-cycle variations of the switching voltages. The such-obtained stochastic propagation model is then applied to feed a Monte-Carlo simulation on the tuned PW-model. The combination reproduces the experimental device fluctuation statistics (with an error smaller than 0.5 mV on the standard deviation). It is further demonstrated capable to simulate the transient operation of a typical spiking circuit prone to material stochasticity. The proposed data-driven methodology is general and could be applied to other models to simulate the impact of memristors device stochasticity on the circuit-level fluctuations, paving the way for faithful statistical modelling of neuromorphic circuits.
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Ratier, T., Van Brandt, L., Bidoul, N., Delvenne, J.-C., & Flandre, D. (2026). Stochasticity-aware modeling methodology of mott memristors validated on vanadium dioxide devices. Engineering Research Express, 8(3). https://doi.org/10.1088/2631-8695/ae36ef (Original work published 2026)