On-membrane PD SOI MOSFET with micro-heater for TID in-situ annealing: experiments versus Eldo and Atlas simulations

Amor, Sedki;Kilchytska, Valeriya;André, Nicolas;Li, Guoli;Flandre, Denis;et.al.
(2018) 14th International School on the Effects of Radiation on Embedded Systems for Space Applications (SERESSA 2018) — Location: Noordwijk (the netherlands) (12.November.2018)

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Abstract
Silicon On Insulator(SOI)technology has improved immunity to Single Event Effects(SEE)thanks to the presence of the Buried Oxide(BOX). However,this technology remain very sensitive to the Total Ionizing Dose(TID)[1]. In recent works, we have integrated micro-heaters in the close vicinity of Partially-Depleted(PD)Metal-Oxide-Semiconductor Field-Effect Transistors(MOSFETs), in order to study the possibility of in-situ thermal annealing to recover from TID-induced degradations[2]. A complete recovery by in-situ thermal annealing was demonstrated, after the exposure to high doses of gamma and proton radiations[1,3]. The bulk etching technique used to perform the membrane, possibly alters the typical MOSFET’s behaviour. In this paper, we use 2D Atlas simulations as well as Mentor Graphics ELDO simulations of the xfab XI10 1μm technology in order to confirm the experimentally observed trends. The simulated I-V characteristics were compared to the experimental measurements of the suspended PD SOI n-MOSFET.
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Amor, S., Kilchytska, V., André, N., Li, G., Rebey, A., Francis, L., & Flandre, D. (2018). On-membrane PD SOI MOSFET with micro-heater for TID in-situ annealing: experiments versus Eldo and Atlas simulations. Proceedings of SERESSA 2018, 1. https://hdl.handle.net/2078.5/272143