Effect of Silicon Substrate Resistivity on Large- Area High-Voltage Spiral Inductor Performance
(2023) 2023 Symposium on Design, Test, Integration & Packaging of MEMS and MOEMS — Location: Valetta, Malta (28.May.2023)
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- Abstract
- In this work, we compare the performance of a large square spiral inductor with an area of 1.08×1.08 mm 2 and an operating frequency of a few hundred MHz, integrated atop four different types of silicon substrates. Measured and simulated results show that the high-resistivity (HR) substrate with a trap-rich (TR) layer yields significantly better performance in terms of quality factor, resonant frequency, self-inductance, and substrate capacitance than the HR or standard Si ones. These results approach those simulated for the same structure suspended on a MEMS membrane. Moreover, the inductor characteristics exhibit good stability under a back-contact voltage varying between -100 V and +100 V in the HR-TR case.
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Citations
Zeidi, N., Rack, M., André, N., Tounsi, F., Raskin, J.-P., & Flandre, D. (2023). Effect of Silicon Substrate Resistivity on Large- Area High-Voltage Spiral Inductor Performance. 2023 Symposium on Design, Test, Integration & Packaging of MEMS and MOEMS. Published. 2023 Symposium on Design, Test, Integration & Packaging of MEMS and MOEMS, Valetta, Malta. https://doi.org/10.1109/DTIP58682.2023.10267935