An Ultra-Thin Ultraviolet Enhanced Backside- Illuminated Single-Photon Avalanche Diode with 650nm-Thin Silicon Body Based on SOI Technology
(2021) IEEE Journal of Selected Topics in Quantum Electronics — p. 11 (2021)
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- Abstract
- We present the world’s thinnest backside illuminated (BSI) single-photon avalanche diode (SPAD) with a silicon (Si) thickness of 650nm fabricated in complementary metaloxide- semiconductor (CMOS) compatible silicon-on-insulator (SOI) technology. The well-optimized doping profile is exploited in this square-shaped BSI SPAD with ultrathin Si body consisting of n++/p-well and n-well guard ring (GR) to outstandingly improve detection efficiency in ultraviolet (UV) spectral range. This BSI SPAD exhibits a low leakage current (0.1pA) and a low breakdown voltage (8.5V) at room temperature (RT). A low dark count rate (DCR) of 156.8cps/μm2 at 3V excess bias is estimated at RT. A peak quantum efficiency (QE) of 96.41% is also measured under a wavelength of 423nm at 4V. This BSI SPAD indicates a peak photon detection probability (PDP) of 69.51% upon a wavelength of 423nm at 3V excess bias. A significant expansion of the UV sensitivity down to a wavelength of 291nm is represented with a PDP of 15.56% at 3V excess bias. To the best of our knowledge, the detection efficiency of this ultrathin BSI SPAD in the UV wavelength regime down to 291nm is the best result ever reported for Si-based BSI SPAD in spite of the absence of an integrated CMOS circuitry.
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Sabri Alirezaei, I., André, N., Amor, S., Gérard, P., & Flandre, D. (2021). An Ultra-Thin Ultraviolet Enhanced Backside- Illuminated Single-Photon Avalanche Diode with 650nm-Thin Silicon Body Based on SOI Technology. IEEE Journal of Selected Topics in Quantum Electronics, 11. https://doi.org/10.1109/JSTQE.2021.3129274 (Original work published 2021)