Porous Silicon Waveguides for Integrated Sub-THz Systems
(2025) IEEE Microwave and Wireless Technology letters — (2025)
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- This letter presents the first experimental demonstration of a new type of silicon-integrated sub-terahertz (THz) waveguide, based on porous silicon (PS). The waveguide (WG) is realized on an ultralow-resistivity (ULR) silicon substrate using a single-step electrochemical anodization that codefines material and geometry, eliminating deep reactive-ion etching (DRIE) and wafer bonding. A coplanar-waveguide-to-PS-WG transition enables direct on-wafer characterization. The fabricated PS WG is targeted for D-band operation and exhibits a measured attenuation loss of 0.7 dB/mm at 140 GHz, in excellent agreement with full-wave simulations. This confirms the validity of the codesign approach. Combining low loss, simplified fabrication, and inherent material tunability, the proposed PS WG offers a promising route toward highly integrated sub-terahertz passive components and enables future gas and biosensing applications.
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Ma, S., André, N., Tuyaerts, R., Francis, L., Raskin, J.-P., & Lederer, D. (2025). Porous Silicon Waveguides for Integrated Sub-THz Systems. IEEE Microwave and Wireless Technology letters. Published. https://doi.org/10.1109/LMWT.2025.3643128 (Original work published 2025)