Symmetrical Ambipolar Transport in SnO Thin-Film Transistors Enabled by Dopant-Induced Preferential Crystal Orientation toward Complementary Logic

Flandre, Denis;Raskin, Jean-Pierre;Hong, Ruohao;et.al.
(2025) Nano Letters — Vol. 25, n° 43, p. 15698-15704 (2025)

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Herein, we present a thulium (Tm) doping strategy combined with hafnium oxide passivation annealing to enhance the preferable orientation crystallinity in SnO films toward balanced hole and electron transport. The optimized ambipolar Tm-doped SnO thin-film transistors (TFTs) exhibit hole and electron mobilities of 30.1 cm2/V·s and 11.8 cm2/V·s with a turn-on voltage about 0 V, respectively. Furthermore, we fabricate complementary thin-film logic circuits using these ambipolar SnO TFTs, including inverters and NAND and NOR gates. A record gain of 474.5 (V/V) is obtained for our ambipolar SnO inverter at a supply voltage of 6 V, which is the highest value reported among all ambipolar material systems due to the matched p- and n-type behaviors of the ambipolar SnO TFTs. By expanding the understanding of ambipolar inverter behavior, this work highlights the significant potential of ambipolar SnO TFTs for future high-performance complementary thin-film circuits.
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Flandre, D., Raskin, J.-P., Hong, R., & et al. (2025). Symmetrical Ambipolar Transport in SnO Thin-Film Transistors Enabled by Dopant-Induced Preferential Crystal Orientation toward Complementary Logic. Nano Letters, 25(43), 15698-15704. https://doi.org/10.1021/acs.nanolett.5c04300 (Original work published 2025)