Low Power K- and Ka- Wideband LNA Design in 22 nm FD-SOI Using Transformer-Tuned Input
(2025) 2025 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) — Location: San Juan, PR, USA (19.January.2025)
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- Abstract
- This paper presents a wideband two-stage low-noise amplifier (LNA) covering continuously from 21 GHz up to 47 GHz. The design employs a feedback technique using a transformer-based network at the input common-source stage which introduces poles and manipulates Γopt (by modifying the noise correlations between the input and output), allowing for an eased implementation of simultaneous power- and noise-match over a wide band. The design was fabricated in the low power 22 nm FD-SOI node from GlobalFoundries. At nominal bias, the measured LNA achieves a gain of 15.5 dB over the entire K- and Ka-bands with 2-dB-ripple, and a minimum noise figure of 2.2 dB for 9.1 mW of power. The bias point can also be effectively modulated through the use of back-gate biasing, allowing overall for more than 10 dB of gain-control.
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Citations
Rack, M., Wane, S., Bajon, D., Raskin, J.-P., & Lederer, D. (2025). Low Power K- and Ka- Wideband LNA Design in 22 nm FD-SOI Using Transformer-Tuned Input. 2025 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 8-11. https://doi.org/10.1109/SiRF63957.2025.11076816 (Original work published 2025)