High-Resistivity Trap-Rich Silicon Substrate Advantages for Large Integrated MIM Capacitors
(2025) IEEE Transactions on Electron Devices — p. 1-7 (2025)
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- Metal-insulator-metal (MIM) capacitors are critical passive components in integrated circuits (ICs) and are widely used in analog, mixed-signal, and radio frequency (RF) applications. This study investigates the advantages of high-resistivity (HR) silicon substrate incorporating a trap-rich (TR) layer (HR-Si+TR) on the performance of large MIM capacitors, compared with conventional silicon substrate, through experimental measurements and electromagnetic simulations. A lumped-element π -model is validated to extract and interpret key performance metrics of the MIM structures, accounting for dielectric leakage, substrate coupling, and resistive losses. A substantial improvement in the quality factor is observed, reaching 65 at 170 MHz compared to 13.5 for the standard Std-Si reference at the same frequency, alongside a slight increase in the resonance frequency. This enhancement originates from the HR-Si+TR substrate transition to dielectric-like behavior at frequencies below the operational RF range, which substantially reduces substrate losses and parasitic coupling. Consequently, minimized parasitic capacitances (ground coupling and fringing effects) allow for a higher quality factor and resonant frequency.
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Zeidi, N., Gabbouj, R., Raskin, J.-P., Tounsi, F., & Flandre, D. (2025). High-Resistivity Trap-Rich Silicon Substrate Advantages for Large Integrated MIM Capacitors. IEEE Transactions on Electron Devices, 1-7. https://doi.org/10.1109/TED.2025.3622098 (Original work published 2025)