Harmonic Distortion in Symmetric and Asymmetric Self-Cascodes of UTBB FD SOI Planar MOSFETs

Martins d’Oliveira, Ligia;Kilchytska, Valeriya;Flandre, Denis;de Souza, Michelly
(2019) 2019 34th Symposium on Microelectronics Technology and Devices (SBMICRO) — Location: Sao Paulo (Brazil) (26.August.2019)

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Authors
  • Martins d’Oliveira, LigiaCentro Universitário FEI, São Bernardo do Campo/Brazil
    Author
  • Kilchytska, ValeriyaUCLouvain
    Author
  • Flandre, Denisorcid-logoUCLouvain
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  • de Souza, MichellyCentro Universitário FEI, São Bernardo do Campo/Brazil
    Author
Abstract
This paper presents an analysis of the harmonic distortion extracted from simulated results of symmetric and asymmetric self-cascode devices (S-SC and A-SC, respectively) composed by ultra-thin body and BOX fully depleted silicon-on-insulator planar MOSFETs 28 nm technological node. The results show that the A-SC effectively increases the operating drain current range for lower distortion. Comparisons with the literature show that the A-SC structures are a promising option for enhancing the circuit design flexibility for advanced MOSFETs.
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Martins d’Oliveira, L., Kilchytska, V., Flandre, D., & de Souza, M. (2019). Harmonic Distortion in Symmetric and Asymmetric Self-Cascodes of UTBB FD SOI Planar MOSFETs. 2019 34th Symposium on Microelectronics Technology and Devices (SBMICRO), Sao Paulo (Brazil). https://hdl.handle.net/2078.5/253461