Indirect light absorption model for highly strained silicon infrared sensors

Roisin, Nicolas; Brunin, Guillaume; Rignanese, Gian-Marco; Flandre, Denis; Raskin, Jean-Pierre

doi:10.1063/5.0057350

Indirect light absorption model for highly strained silicon infrared sensors

Roisin, Nicolas

;

Brunin, Guillaume

;

Rignanese, Gian-Marco

;

Flandre, Denis

;

Raskin, Jean-Pierre

(2021) Journal of Applied Physics — Vol. 30, n° 5, p. 30 (2021)

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Authors

Roisin, NicolasUCLouvain
Author
Brunin, GuillaumeUCLouvain
Author
Rignanese, Gian-MarcoUCLouvain
Author
Flandre, DenisUCLouvain
Author
Raskin, Jean-PierreUCLouvain
Author

Affiliations

UCLouvainSST/IMCN - Institute of Condensed Matter and Nanosciences
UCLouvainSST/ICTM/ELEN - Pôle en ingénierie électrique
UCLouvainSST/IMCN/MODL - Modelling

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Roisin, N., Brunin, G., Rignanese, G.-M., Flandre, D., & Raskin, J.-P. (2021). Indirect light absorption model for highly strained silicon infrared sensors. Journal of Applied Physics, 30(5), 30. https://doi.org/10.1063/5.0057350 (Original work published 2021)