Quantum Efficiency Improvement of SOI PIN Lateral Diodes Operating as UV Detectors at High Temperatures
(2017) IEEE Sensors Journal — Vol. PP, n° 99, p. 8 (2017)
Files
QuantumEfficiencyImprovementofSOIPINLateralDiodesOperatingasUVDetectorsatHightemperatures.pdf
Open Access - Adobe PDF
- 723.24 KB
Details
- Authors
- Abstract
- Thin-film lateral SOI PIN diodes can be used as photodetectors especially in the wavelength range of blue and UV radiation. Unlike vertical devices, lateral diodes can have depletion regions very close to the device surface, where the absorption of low-wavelengths radiation takes place. Due to this proximity to the surface, a MOS back-gate can control the charge density inside this region, allowing quantum efficiency improvement. This work reports experimental results of SOI PIN photodetectors with different intrinsic lengths in the 300K to 500 K range, simultaneously considering back-gate bias and temperature influences. Indeed, the back-gate bias becomes very effective in terms of quantum efficiency control with up to 52.4% for LI=1μm at T=500K in inversion mode, while in accumulation, the resulting efficiency was 48.2% at T=500K for the device with LI=10μm at UV. These variations are related to the behavior of dark current and recombination rate of the devices.
- Affiliations
Citations
Novo, C., Bühler, R., Giacomini, R., Afzalian, A., & Flandre, D. (2017). Quantum Efficiency Improvement of SOI PIN Lateral Diodes Operating as UV Detectors at High Temperatures. IEEE Sensors Journal, PP(99), 8. https://doi.org/10.1109/JSEN.2017.2647848 (Original work published 2017)