Ultimate Limit in Optoelectronic Performances of Monolayer WSe2 Sloping-Channel Transistors
(2023) Nano Letters : a journal dedicated to nanoscience and nanotechnology — Vol. 23, p. 6664-6672 (2023)
Files
xie-et-al-2023-ultimate-limit-in-optoelectronic-performances-of-monolayer-wse2-sloping-channel-transistors.pdf
Open Access - Adobe PDF
- 3.44 MB
Details
- Authors
- et. al.
- Abstract
- Atomically thin monolayer two-dimensional (2D) semiconductors with natural immunity to short channel effects are promising candidates for sub-10 nm very large-scale integration technologies. Herein, the ultimate limit in optoelectronic performances of monolayer WSe2 field-effect transistors (FETs) is examined by constructing a sloping channel down to 6 nm. Using a simple scaling method compatible with current micro/nanofabrication technologies, we achieve a record high saturation current up to 1.3 mA/μm at room temperature, surpassing any reported monolayer 2D semiconductor transistors. Meanwhile, quasi-ballistic transport in WSe2 FETs is first demonstrated; the extracted high saturation velocity of 4.2 × 106 cm/s makes it suitable for extremely sensitive photodetectors. Furthermore, the photoresponse speed can be improved by reducing channel length due to an electric field-assisted detrapping process …
- Affiliations
Citations
Xie, Z., Li, G., Xia, S., Liu, C., Zhang, S., Flandre, D., & et al. (2023). Ultimate Limit in Optoelectronic Performances of Monolayer WSe2 Sloping-Channel Transistors. Nano Letters : a journal dedicated to nanoscience and nanotechnology, 23, 6664-6672. https://doi.org/10.1021/acs.nanolett.3c01866 (Original work published 2023)