High Voltage Gain WSe2 Complementary Compact Inverter With Buried Gate for Local Doping
(2020) IEEE Electron Device Letters — Vol. 41, n° 6, p. 944-947 (2020)
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- Abstract
- Two-dimensional (2D)materials such as WSe2 are potential for advanced electronics because of their ultra-thin geometry and unique electrical properties. Herein, a simplified high-performance WSe2 complementary inverter based on a buried gate is demonstrated on an individual ambipolar WSe2 flake, in which both n- and p-type WSe2 transistors are achieved by local doping. The n-type doping is induced by the donors of benzyl viologen, showing an electron mobility of 28.1 cm2/V·s. In contrast, the p-type one is realized by Ozone exposure with a high mobility of 36.8 cm2/V·s. The buried gate enables enhanced electrostatic coupling,with a supply voltage (Vdd) of 5 V, and the complementary inverter demonstrates a voltage gain beyond 32, almost ideal noise margin approaching 0.5Vdd and low static power consumption. This work paves the way to achieve high-performance 2D material complementary inverters with simplified fabrication process.
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Citations
Wan, D., Hao, H., CHEN, C., Abliz, A., Ye, C., Liu, X., Zou, X., Li, G., Flandre, D., & Liao, L. (2020). High Voltage Gain WSe2 Complementary Compact Inverter With Buried Gate for Local Doping. IEEE Electron Device Letters, 41(6), 944-947. https://doi.org/10.1109/LED.2020.2988488 (Original work published 2020)