The Impact of LCE and PAMDLE Regarding Different CMOS ICs Nodes and High Temperatures

GALEMBECK, EGON HENRIQUE SALERNO;Renaux, Christian;SWART, JACOBUS WILLIBRORDUS;Flandre, Denis;GIMENEZ, SALVADOR PINILLOS
(2021) I E E E Journal of the Electron Devices Society — Vol. 9, p. 415-423 (2021)

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Authors
  • GALEMBECK, EGON HENRIQUE SALERNODepartment of Electrical Engineering, FEI University Center, São Bernardo do Campo, São Paulo 09850901, Brazil
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  • Renaux, ChristianUCLouvain
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  • SWART, JACOBUS WILLIBRORDUSFEEC/UNICAMP, UNICAMP University, Campinas 13083-970, Brazil
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  • Flandre, Denisorcid-logoUCLouvain
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  • GIMENEZ, SALVADOR PINILLOSDepartment of Electrical Engineering, FEI University Center, São Bernardo do Campo, São Paulo 09850901, Brazil
    Author
Abstract
This paper describes the influence of Longitudinal Corner Effect (LCE effect) and PArallel Connection of Metal–Oxide–Semiconductor Field-Effect Transistors (MOSFETs) with Different Channel Lengths Effect (PAMDLE effect) of Diamond (hexagonal gate shape) MOSFET in different Complementary Metal-Oxide-Semiconductor (CMOS) Integrated Circuits (ICs) technologies (180nm-Bulk and 1μm- Silicon-On-Insulator, SOI) and in a wide range of high-temperatures (from 300K to 573K). The results have shown (average gains of Diamond MOSFET in relation to standard MOSFET: 60% for saturation drain current, 51% for transconductance, 10% for transconductance-over-drain current ratio etc.) that LCE and PAMDLE effects tend to be similar for CMOS ICs technological nodes used and the different high temperatures. Therefore, we can conclude, for the first time, that LCE and PAMDLE effects are kept active in different CMOS ICs technological nodes and when the Diamond MOSFET is exposed at high temperatures.
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GALEMBECK, E. H. S., Renaux, C., SWART, J. W., Flandre, D., & GIMENEZ, S. P. (2021). The Impact of LCE and PAMDLE Regarding Different CMOS ICs Nodes and High Temperatures. I E E E Journal of the Electron Devices Society, 9, 415-423. https://doi.org/10.1109/JEDS.2021.3071399 (Original work published 2021)