TCAD Simulation Study on P-type Source-gated CuO TFTs

Chen, Qi;Flandre, Denis
(2023) Symposium on Schottky Barrier MOS 2023 “The Schottky barrier transistor in emerging electronic devices” — Location: Paris, France (28.September.2023)

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Chen, Q., & Flandre, D. (2023). TCAD Simulation Study on P-type Source-gated CuO TFTs. Symposium on Schottky Barrier MOS 2023 “The Schottky barrier transistor in emerging electronic devices”, Paris, France. https://hdl.handle.net/2078.5/252460