Sub-6 GHz RF SPDT Switches Designed in an Advanced 28 nm Fully-Depleted Silicon-on-Insulator Technology with a High Resistivity Substrate

Nabet, Massinissa;Rack, Martin;Crémer, Sébastien;Paillardet, Frédéric;Lederer, Dimitri;et.al.
(2024) 2024 19th European Microwave Integrated Circuits Conference (EuMIC) — Location: Paris, France (23.September.2024)

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Abstract
In this paper two RF switches named as 3-stack and 12-stack are studied. They are designed to have the same overall RON and built using a 28 nm FD-SOI technology atop of different substrate resistivities. A new advanced passivation technique is also used in order to boost the switches’ performance. The 3-stack switch atop of standard Process of Reference (POR) substrate (~15 Ωcm) shows an insertion loss 1.2 dB higher than the same switch atop of high-resistivity (>1 k Ωcm) with advanced passivation technique. Moreover, the 12-stack switch with advanced passivation technique demonstrates 2.5 dB improvement in the insertion loss compared to the same one built on a standard substrate while the isolation remains lower than 20 dB.
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Nabet, M., Rack, M., Crémer, S., Paillardet, F., Cathelin, A., Raskin, J.-P., & Lederer, D. (2024). Sub-6 GHz RF SPDT Switches Designed in an Advanced 28 nm Fully-Depleted Silicon-on-Insulator Technology with a High Resistivity Substrate. 2024 19th European Microwave Integrated Circuits Conference (EuMIC). Published. 2024 19th European Microwave Integrated Circuits Conference (EuMIC), Paris, France. https://doi.org/10.23919/EuMIC61603.2024.10732828