28 GHz Down-Conversion Mixer with RF Back-Gate Excitation Topology in 22-nm FD-SOI
(2022) 17th European Microwave Integrated Circuits Conference — Location: Milan, Italy (2022.September.26AD)
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- Abstract
- This paper presents a novel 28 GHz down- conversion mixer topology using the back-gate terminal in 22 nm FD-SOI as an RF excitation port for the 21 GHz local oscillator (LO) signal. A double balanced architecture with an active load and transimpedance amplifier were implemented in the 22FDX® technology from GlobalFoundries. The mixing functionality is provided at the level of a single FET, that is simultaneously excited at the front- and back-gates by the RF and LO signals, respectively. Under 0.9 V power supply (26 mW DC consumption) the proposed down-conversion mixer exhibits a maximum conversion gain of 3.5 dB by applying 10 dBm of LO power. The 1 dB compression point occurs at -6 dBm of RF input power and the third order intercept (IIP3) point is 15 dBm at nominal LO power. Benchmarking these values against mixer performances from the literature reveals this design to be close to the current state-of-the- art in CMOS and SOI technology, demonstrating the viability of this novel topology employing back-gate excitation at mm-wave frequencies
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Citations
Nabet, M., Rack, M., Nyssens, L., Raskin, J.-P., & Lederer, D. (2022). 28 GHz Down-Conversion Mixer with RF Back-Gate Excitation Topology in 22-nm FD-SOI. Proceedings of the 17th European Microwave Integrated Circuits Conference. Published. 17th European Microwave Integrated Circuits Conference, Milan, Italy. https://hdl.handle.net/2078.5/237351