High-Resistivity substrates with PN interface passivation in 22 nm FD-SOI
(2022) The 2022 International Symposium on VLSI Technology Systems and Applications (VLSI-TSA) — Location: Hsincu, Taiwan (18.April.2022)
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VLSI-TSA2022_High-Resistivity_Substrates_with_PN_Interface_Passivation_in_22_nm_FD-SOI.pdf
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- Abstract
- In this paper, GlobalFoundries’ 22 nm FD-SOI process was run on standard and high-resistivity wafers evaluating a PN junction interface passivation solution to counter parasitic surface conduction (PSC) effects. Substrate quality was monitored in terms of losses, effective resistivity (ρeff) and generated harmonics through on-wafer measurements of coplanar waveguides (CPW), fabricated in either bottom metal or in top metal layers. The PN patterns demonstrate effective passivation of the PSC, enabling ρeff values in the kΩcm range. Patterns with bias contacts were fabricated, demonstrating substantial increase in ρeff when applying a reverse bias to widen the depletion regions. PN grid patterns also exhibit good RF performance results, and are attractive since they alleviate layout/PN pattern co-design.
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Citations
Rack, M., Nyssens, L., Nabet, M., Lederer, D., & Raskin, J.-P. (2022). High-Resistivity substrates with PN interface passivation in 22 nm FD-SOI. The 2022 International Symposium on VLSI Technology Systems and Applications (VLSI-TSA). Published. The 2022 International Symposium on VLSI Technology Systems and Applications (VLSI-TSA), Hsincu, Taiwan. https://doi.org/10.1109/VLSI-TSA54299.2022.9771028