Low-frequency Noise in Polysilicon Source-Gated TransistorsChen, Qi;et.al.(2024) Symposium on Schottky Barrier MOS 2024 “The Schottky barrier transistor for neuromorphic applications” (19.September.2024)
FilesSSBMOS2024_qi.pptx Open Access Microsoft Powerpoint XML5.04 MBDownloadDetailsAuthorsChen, QiUCLouvainAuthor et. al. AffiliationsUCLouvainSST/ICTM/ELEN - Pôle en ingénierie électriqueShow moreCitations APA Chicago FWB Chen, Q., & et al. (2024). Low-frequency Noise in Polysilicon Source-Gated Transistors. Symposium on Schottky Barrier MOS 2024 “The Schottky barrier transistor for neuromorphic applications”. https://hdl.handle.net/2078.5/233148