Low-Frequency Noise Transistor Performance for UTBB FDSOI MOSFET-C Filters
(2019) S3S Conference — Location: San José (USA) (13.October.2019)
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- Authors
Kazemi Esfeh, Babak 
- Abstract
- This work investigates the low-frequency noise performance of a long-channel UTBB FD SOI nMOS transistor operated in triode region as typically used for MOSFET-C filter applications. Measurements of the low-frequency noise have been performed over a large temperature range (25–125ºC) at different constant currents above threshold, as a function of the back-gate bias. It is highlighted that in such case, 1/f noise power is dominant, however sufficiently low, in the frequency range of interest for the filters, i.e. below 1 MHz. Noise power strongly reduces with temperature and slightly with positive back-gate bias, which is adequate for the filter tuning.
- Affiliations
Citations
Van Brandt, L., Kazemi Esfeh, B., Planes, N., Kilchytska, V., & Flandre, D. (2019). Low-Frequency Noise Transistor Performance for UTBB FDSOI MOSFET-C Filters. S3S Conference, San José (USA). https://hdl.handle.net/2078.5/228415