Figures of merit of nanoscale transistors at cryogenic temperature: 28nm UTBB FD SOI nMOSFET case study
(2019) 3rd Symposium on Schottky barrier MOS devices — Location: Gif-sur Yvette (France) (4.October.2019)
Files
Figuresofmeritofnanoscaletransistorsatcryogenictemperature-28nmUTBBFDSOInMOSFETcasestudy.pdf
Open Access - Adobe PDF
- 1.38 MB
Details
- Authors
Kazemi Esfeh, Babak 
- Affiliations
Citations
Flandre, D., Kazemi Esfeh, B., Nyssens, L., Halder, A., Kilchytska, V., & Raskin, J.-P. (2019). Figures of merit of nanoscale transistors at cryogenic temperature: 28nm UTBB FD SOI nMOSFET case study. 3rd Symposium on Schottky barrier MOS devices, Gif-sur Yvette (France). https://hdl.handle.net/2078.5/228254