Low-frequency noise behavior of graded-channel SOI n-MOSFETs
(2006) Second Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits – EuroSOI’06 — Location: Grenoble (France) (8.March.2006)
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- Abstract
- The low-frequency noise of graded-channel (GC) Silicon-on-Insulator (SOI) n-MOSFETs is studied in function of different parameters: the doped channel length Leff and the implantation dose. It will be shown here that there exists a positive correlation between gm and the corresponding input-referred noise spectral density SVG. The possible trade-off between high gain and low (1/f) noise will be investigated and the physical mechanisms responsible for the observed trends discussed.
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Citations
Simoen, E., Claeys, C., Chung, T. M., Flandre, D., & Raskin, J.-P. (2006). Low-frequency noise behavior of graded-channel SOI n-MOSFETs. Second Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits – EuroSOI’06, Grenoble (France). https://hdl.handle.net/2078.5/228205