Self-Heating in 28 FDSOI UTBB MOSFETs at Cryogenic Temperatures

Nyssens, Lucas;Halder, Arka;Kazemi Esfeh, Babak;Planes, Nicolas;Kilchytska, Valeriya;et.al.
(2019) 49th European Solid-State Device Research Conference (ESSDERC 2019) — Location: Cracow (Poland) (23.September.2019)

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Abstract
This work studies, for the first time to the authors’ best knowledge, the self-heating (SH) effect in ultra-thin body ultra-thin BOX (UTBB) FDSOI MOSFETs at cryogenic temperatures down to 77 K. S-parameter measurements in a wide frequency range, with the so-called RF technique, is employed to assess SH parameters and related degradation of analog figures of merit (FoMs) at different temperatures. Contrary to the expectations, the effect of self-heating on analog FoMs is slightly weaker at cryogenic temperatures with respect to room-temperature case. The extracted thermal resistance and channel temperature rise at 300 K and 77 K are of the same order of magnitude. The observed increase in SH characteristic frequency with temperature reduction emphasizes the advantage of the RF technique for the fair analysis of SH-related features in advanced technologies at cryogenic temperatures.
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Nyssens, L., Halder, A., Kazemi Esfeh, B., Planes, N., Haond, M., Flandre, D., Raskin, J.-P., & Kilchytska, V. (2019). Self-Heating in 28 FDSOI UTBB MOSFETs at Cryogenic Temperatures. 49th European Solid-State Device Research Conference (ESSDERC 2019), Cracow (Poland). https://hdl.handle.net/2078.5/227113