Design and fabrication of a novel power Si/SiC LDMOSFET for high temperature applications

Gammon, P.M.;Li, F.;Chan, C.W.;Gity, F.;Flandre, Denis;et.al.
(2017) 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2017) — Location: Athens (Greece) (3.April.2017)

Files

DesignandfabricationofanovelpowerSi-SiCLDMOSFETforhightemperatureapplications.pdf
  • Open Access
  • Adobe PDF
  • 278.13 KB
Download

Details

Authors
  • Gammon, P.M.School of Engineering, University of Warwick , Coventry/UK
    Author
  • Li, F.School of Engineering, University of Warwick , Coventry/UK
    Author
  • Chan, C.W.School of Engineering, University of Warwick , Coventry/UK
    Author
  • Gity, F.Tyndall National Institute, University College Cork, Cork/Ireland
    Author
  • Kilchytska, ValeriyaUCLouvain
    Author
  • Ben Ali, KhaledUCLouvain
    Author
  • Flandre, DenisUCLouvain
    Author
Show more
Abstract
In this paper we present for the first time the design and fabrication of a silicon-on-silicon carbide Si/SiC laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) targeting 200-600 V blocking voltages for high temperature, harsh environment applications such as space and downhole drilling. The final paper will focus on the electrical characterization of this newly fabricated device.
Affiliations

Citations

  • APA
  • Chicago
  • FWB

Gammon, P. M., Li, F., Chan, C. W., Gity, F., Trajkovic, T., Kilchytska, V., Pathirana, V., Udugampola, N., Ben Ali, K., & Flandre, D. (2017). Design and fabrication of a novel power Si/SiC LDMOSFET for high temperature applications. Proceedings of the 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EU, p. 2. https://hdl.handle.net/2078.5/226698