Substrate effects in GaN-on-Si HEMT technology for RF FEM applications
(2022) The 242nd ElectroChemical Society Meeting – ECS 2022 — Location: Atlanta, GA, USA (9.October.2022)
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Yadav, S., Cardinael, P., Zhao, M., Vondkar, K., Peralagu, U., Alian, A., Rodriguez, R., Khaled, A., Makovejev, S., Ekoga, E., Lederer, D., Raskin, J.-P., Parvais, B., & Collaert, N. (2022). Substrate effects in GaN-on-Si HEMT technology for RF FEM applications. The 242nd ElectroChemical Society Meeting – ECS 2022, p. Poster P3.42. https://doi.org/10.1149/MA2022-02321208mtgabs