A Compact 120 GHz LNA in 22 nm FD-SOI with Back-Gate Controllable Variable-Gain
(2023) 18th European Microwave Integrated Circuits Conference (EuMIC) — Location: Berlin, Germany
Files
A_Compact_120_GHz_LNA_in_22_nm_FD-SOI_with_Back-Gate_Controllable_Variable-Gain.pdf
Open Access - Adobe PDF
- 1.3 MB
Details
- Authors
- Abstract
- This paper describes the design and implementation of a 113.5-127 GHz D-band LNA using GlobalFoundries’ 22 nm FD-SOI technology. The proposed design achieves 6.6 dB of minimal noise-figure in-band for a peak gain of 17.5 dB at its nominal bias for a 27.5 mW power-consumption using a low supply voltage of 0.75 V, and can achieve an NF down to 6.1 dB and gain up to 19.1 dB in a high-performance state. On top of that, the LNA can be configured as a variable-gain device by making use of the unique back-gate bias node of the 22FDX® technology. In that case, a 9.7 dB gain-control is achieved over a 2 V bias range at the back-gates. The design achieves a low area of 0.039 mm² thanks to its layout based on compact transformers.
- Affiliations
Citations
Rack, M., L. Nyssens, Q.H. Le, D.K. Huynh, T. Kämpfe, Raskin, J.-P., & Lederer, D. (2023). A Compact 120 GHz LNA in 22 nm FD-SOI with Back-Gate Controllable Variable-Gain. 18th European Microwave Integrated Circuits Conference (EuMIC). Published. 18th European Microwave Integrated Circuits Conference (EuMIC), Berlin, Germany. https://hdl.handle.net/2078.5/219548