Ultra-thin body and thin-BOX SOI CMOS technology analog figures of merit
(2012) Solid-State Electronics — Vol. 70, p. 50-58 (2012)
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- Abstract
- In this paper, we analyze, for the first time to our best knowledge, the perspectives of ultra-thin body and ultra-thin BOX (UTBB) SOI CMOS technology for analog applications. We show that UTBB is a promising contender for analog applications, exhibiting high maximum transconductance, drive current, intrinsic gain and achievable cut-off frequencies in the range of 150–220 GHz. Effect of operation regime, sub- strate bias, channel width and high temperature (up to 250 ° C) on analog figures-of-merit (FoM) are ana- lyzed. Benchmarking of UTBB with other technologies (as planar FD SOI, different FinFETs, UTB with thick BOX) is presented. Ó
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Kilchytska, V., Md Arshad, M. K., Makovejev, S., Olsen, S., Andrieu, F., Poiroux, T., Faynot, O., Raskin, J.-P., & Flandre, D. (2012). Ultra-thin body and thin-BOX SOI CMOS technology analog figures of merit. Solid-State Electronics, 70, 50-58. https://hdl.handle.net/2078.5/168413 (Original work published 2012)