True Silicon-on-Nothing MOSFETs fabricated by Si layer transfer over a pre-etched cavity
(2007) Solid-State Electronics — Vol. 51, p. 1238-1244 (2007)
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- Abstract
- In this paper, ‘‘true’’ Silicon-On-Nothing (SON) MOSFETs fabricated by a new technique, consisting in Si layer transfer over a preetched cavity, are investigated. The process has no potential limitation with regards to the device dimensions as well as to the thicknesses of Si film and so-called ‘‘nothing’’ layers. Comparing to single-gate (SG) fully-depleted (FD) SOI MOSFETs fabricated on the same wafer, improved electrical characteristics of SON MOSFETs are demonstrated. Self-heating effect, which can be considered as the main drawback of SON devices, is experimentally addressed for the first time. Finally, the source-to-drain coupling through the substrate is demonstrated to be practically suppressed in such device architecture.
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Citations
Kilchytska, V., Chung, T. M., Vovk, Y., Raskin, J.-P., & Flandre, D. (2007). True Silicon-on-Nothing MOSFETs fabricated by Si layer transfer over a pre-etched cavity. Solid-State Electronics, 51, 1238-1244. https://hdl.handle.net/2078.5/168300 (Original work published 2007)