28-nm FD-SOI CMOS RF Figures of Merit Down to 4.2 K
(2020) I E E E Journal of the Electron Devices Society — Vol. B, p. 646-654 (2020)
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- Abstract
- This work presents a detailed RF characterization of 28-nm FD-SOI nMOSFETs at cryogenic temperatures down to 4.2 K. Two main RF Figures of Merit (FoMs), i.e., current-gain cutoff frequency (ft) and maximum oscillation frequency (fmax), as well as parasitic elements of the small-signal equivalent circuit, are extracted from the measured S-parameters. An improvement of up to ∼130 GHz in ft and ∼75 GHz in fmax is observed for the shortest device (25 nm) at low temperature. The behavior of RF FoMs versus temperature is discussed in terms of small-signal equivalent circuit elements, both intrinsic and extrinsic (parasitics). This study suggests 28-nm FD-SOI nMOSFETs as a good candidate for future cryogenic applications down to 4.2 K and clarifies the origin and limitations of the performance.
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Citations
Nyssens, L., Halder, A., Kazemi Esfeh, B., Planes, N., Flandre, D., Kilchytska, V., & Raskin, J.-P. (2020). 28-nm FD-SOI CMOS RF Figures of Merit Down to 4.2 K. I E E E Journal of the Electron Devices Society, B, 646-654. https://doi.org/10.1109/JEDS.2020.3002201 (Original work published 2020)