Analysis of Mismatching on the Analog Characteristics of GC SOI MOSFETs

Alves, Camila Restani;Flandre, Denis;de Souza, Michelly
(2018) Journal of Integrated Circuits and Systems — Vol. 13, n° 3, p. 1-8 (2018)

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Authors
  • Alves, Camila RestaniDepartment of Electrical Engineering, Centro Universitário FEI, São Bernardo do Campo, Brazil
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  • Flandre, DenisUCLouvain
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  • de Souza, MichellyDepartment of Electrical Engineering, Centro Universitário FEI, São Bernardo do Campo, Brazil
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Abstract
This paper presents an evaluation of mismatch impact on the analog characteristics of fully-depleted graded-channel (GC) SOI MOSFET. This study is carried out by means of electrical measurements and two-dimensional numerical simulations, comparing GC to uniformly doped transistors. Im-portant basic parameters such as threshold voltage and sub-threshold slope were analyzed as well as analog parameters, namely transconductance, output conductance, Early voltage and intrinsic voltage gain.
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Alves, C. R., Flandre, D., & de Souza, M. (2018). Analysis of Mismatching on the Analog Characteristics of GC SOI MOSFETs. Journal of Integrated Circuits and Systems, 13(3), 1-8. https://doi.org/10.29292/jics.v13i3.16 (Original work published 2018)