A method for threshold voltage extraction in junctionless MOSFETs using the derivative of transconductance-to-current ratio

Rudenko, Tamara;Nazarov, Alexei;Barraud, S.;Kilchytska, Valeriya;Flandre, Denis
(2020) Solid-State Electronics — Vol. 107723, n° 161, p. 26 (2019)

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Authors
  • Rudenko, TamaraV. E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine
    Author
  • Nazarov, AlexeiV. E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine
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  • Barraud, S.CEA-LETI Minatec, Grenoble, France
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  • Kilchytska, ValeriyaUCLouvain
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  • Flandre, Denisorcid-logoUCLouvain
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Abstract
In this paper, using numerical simulations, analytical modeling and experimental data, we validate the applicability of the transconductance-to-current ratio (gm/ID) derivative (d(gm/ID)/dVG) method for extracting the threshold voltage (VTH) in junctionless (JL) MOSFETs and show its advantages over the commonly-used transconductance derivative (or double derivative of drain current) method (dgm/dVG≡d2ID/dVG 2). It is shown that, although both methods are based on the same theoretical VTH-criterion, the d(gm/ID)/dVG method is more accurate than the d2ID/dVG 2 method due to its lesser sensitivity to the gate-voltage-dependent mobility and series resistance parasitic effects, being particularly important in JL MOSFETs.
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Rudenko, T., Nazarov, A., Barraud, S., Kilchytska, V., & Flandre, D. (2020). A method for threshold voltage extraction in junctionless MOSFETs using the derivative of transconductance-to-current ratio. Solid-State Electronics, 107723(161), 26. https://doi.org/10.1016/j.sse.2019.107723 (Original work published 2019)