Routes towards novel active pressure sensors in thin film SOI technology
(2011)
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- Authors
- Supervisors
- Raskin, Jean-Pierre
- Abstract
- (en) Beside resistive bridges, active and smart pressure sensors are particularly attractive. In SOI technology, fabricating such sensors on very thin dielectric membranes by the use of the buried oxide as etch stop layer appears as a real opportunity. Moreover, the co-integration principle can be pushed to the use of MOS devices as pressure transducers. In the first part of this work, Voltage Controlled Oscillators (VCOs) are fully integrated on the border of large membranes. The low thickness of such membranes (1.5 µm) requires severe stress management. Mechanical measurements with calibrated pressure combined with Finite Element Modeling (FEM) results show the limitation of the proposed architecture in terms of membrane robustness: early fracture of functionalized membranes (~0.7 bar instead of more than 5 bars for a blank thin membrane) is caused by the patterning on the membrane. Evolving the concept and carrying it further towards its validation, original and robust smart pressure sensor designs are experimentally demonstrated and declined on several configurations. In a second part, contributions to the emergence of such sensors are brought from a more general point of view i.e. the applicative contexts of 3D-IC integration and special substrates preparation through the analysis of four case-studies centered on Direct Wafer Bonding (DWB). The work closes with the successful fabrication of planar double-gate SOI MOS devices. This device architecture is envisioned to further improve the electrical behavior of the suspended devices.
- Affiliations
Citations
Olbrechts, B. (2011). Routes towards novel active pressure sensors in thin film SOI technology. https://hdl.handle.net/2078.5/160539