Effect of temperature on advanced Si-based substrates performance for RF passive integration
(2013) Materials for Advanced Metallization – MAM 2013 — Location: Leuven (Belgium) (10.March.2013)
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- Abstract
- Co-integration of digital and analog systems using off-chip technologies is difficult, onerous, and adds parasitic effects due to additional interconnections and packages for both, multi-chip-module (MCM)and System in Package (SiP) approaches. Two different Si-based solutions, Porous Si (PSi) [1-2] and Trap-Rich Silicon (TR Si) [3-4] appear as enabling technologies for the fabrication smaller, faster and cheaper RF devices. The choice of one technology over another depends on whether we decide to be compatible with bulk or SOI CMOS process.
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Citations
Roda Neve, C., Ben Ali, K., Sarafis, P., Hourdakis, E., Nassiopoulou, A. G., & Raskin, J.-P. (2013). Effect of temperature on advanced Si-based substrates performance for RF passive integration. Proceedings of the Materials for Advanced Metallization – MAM 2013, 151-152. https://hdl.handle.net/2078.5/228064