High-Temperature DC and RF behaviors of Partially-Depleted SOI MOSFET transistors
(2008) Solid-State Electronics — Vol. 52, n° 12, p. 1924-1932 (2008)
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- Abstract
- RF figures of merit are deeply investigated, both analytically and experimentally, to provide a complete study of high-temperature performance and a comparison between floating-body and body-tied transistors. A highly stable RF performance is noticed especially for cutoff frequency and intrinsic elements for temperature as high as 250 C.
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Citations
Emam, M., Tinoco, C., Vanhoenacker-Janvier, D., & Raskin, J.-P. (2008). High-Temperature DC and RF behaviors of Partially-Depleted SOI MOSFET transistors. Solid-State Electronics, 52(12), 1924-1932. https://hdl.handle.net/2078.5/168294 (Original work published 2008)