Fully Liquid-Metal-Printed SnO₂ Thin-Film Transistors With Al₂O₃ Dielectrics
(2026) IEEE Transactions on Electron Devices — (2026)
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- Abstract
- In this work, we present the first demonstration of fully printed thin-film transistors (TFTs) using the liquid-metal printing (LMP) technique for both the SnO2 channel and Al2O3 dielectric layers and investigate annealing impact on the microstructure of LMP-SnO2 films and electrical behavior of LMP-based SnO2 TFTs. Through experimental characterization and TCAD simulations, we find that the overall device performance initially degrades below 310 ∘ C due to increased oxygen vacancy ( VO ) concentration but recovers at higher temperatures owing to the reduction in VO concentration and crystallization-induced suppression of interface defects. The LMP-SnO2 TFTs on SiO2/p+-Si substrate annealed at 600 ∘ C achieve a field-effect mobility of 10.35 cm 2⋅ V -1⋅ s -1 . The performance is further improved by implementing the LMP-Al2O3 gate dielectric, yielding a subthreshold swing (SS) of 654mV/dec and a threshold voltage of 0.95 V. Finally, a functional zero- V GS-load nMOS inverter unit, comprising both depletion and enhancement mode SnO2 TFTs, demonstrates the potential application of this LMP technique for integrated circuits. This work establishes a novel strategy for fabricating high-performance metal–oxide TFTs and circuits via fully LMP-based manufacturing.
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Citations
Guo, R., Song, Y., Du, A., Raskin, J.-P., Flandre, D., & Iniguez, B. (2026). Fully Liquid-Metal-Printed SnO₂ Thin-Film Transistors With Al₂O₃ Dielectrics. IEEE Transactions on Electron Devices. Published. https://doi.org/10.1109/TED.2026.3657326 (Original work published 2026)