A SPDT RF switch small- and large-signal characteristics on TR-HR SOI substrates
(2017) IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference — Location: San Francisco, USA (16.October.2017)
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- Authors
Kazemi Esfeh, Babak 
- Abstract
- This paper evaluates the small- and large-signal characteristics of a single pole double thru (SPDT) RF antenna switch including its insertion loss, isolation and non-linear behavior. It is fabricated on two different types of high resistivity (HR) Silicon-on- Insulator (SOI) substrates: one standard (HR-SOI) and one trap-rich (RFeSI80). Using a special test structure, the contribution of substrate and active devices is separated for both in small- and large-signal. It is shown that by using trap-rich substrate technology, a reduction of more than 17 dB of 2nd harmonic is achieved compared with HR SOI substrate.
- Affiliations
Citations
Kazemi Esfeh, B., Makovejev S., Allibert F., & Raskin, J.-P. (2017). A SPDT RF switch small- and large-signal characteristics on TR-HR SOI substrates. Proceedings of the IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, p. paper #11.2. https://hdl.handle.net/2078.5/226930