Efficient small-signal extraction technique for Ultra-Thin Body and Ultra-Thin BOX FD-SOI transistor
(2015) NEMO 2015 — Location: Ottawa (Canada) (11.August.2015)
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- Abstract
- In this paper, an efficient extrac proposed for determining all extrinsic and i values of SOI-UTBB transistors. Starting fro parameters and using simple Z- and Y-matrix the proposed technique exploits the independen value under DC bias conditions to first extr elements values and then the intrinsic ones. The are verified through successful comparison be and measured S-parameters up to 40GHz.
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Citations
Maafri, D., Yagoub, M. C. E., Touhami, R., Belaroussi, M. T., Slimane, A., & Raskin, J.-P. (2015). Efficient small-signal extraction technique for Ultra-Thin Body and Ultra-Thin BOX FD-SOI transistor. NEMO 2015, Ottawa (Canada). https://hdl.handle.net/2078.5/228474