Impact of III-N buffer layers on RF losses and harmonic distortion of GaN-on-Si Substrates
(2021) European Solid-State Device Research Conference (ESSDERC 2021) — Location: Grenoble, France (13.September.2021)
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- Abstract
- The reduction of substrate RF losses and nonlinearities is key to enable high-performance GaN-on-Si HEMT based RF front-end modules. In this paper, the impact of the epitaxial III-N buffer layers on substrate RF losses and harmonic distortion is studied experimentally using coplanar waveguide (CPW) structures. In contrast to a SiO2/Si stack, a strong hysteresis in the RF losses (quantified using effective resistivity (rho_eff) of the HEMT stack is observed when the chuck DC bias is swept. A comparative analysis of various material stacks suggests that the hysteresis originates from the large time constants (much larger than 1 s) associated with the traps in the III-N layers. Harmonic distortion, on the other hand, shows much weaker hysteresis effect than reff during chuck bias sweeps
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Cardinael, P., Yadav, S., Zhao, M., Rack, M., Lederer, D., Collaert, N., Parvais, B., & Raskin, J.-P. (2021). Impact of III-N buffer layers on RF losses and harmonic distortion of GaN-on-Si Substrates. ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC). Published. European Solid-State Device Research Conference (ESSDERC 2021), Grenoble, France. https://doi.org/10.1109/ESSDERC53440.2021.9631822 (Original work published 2021)