Depleted AlN/Si interfaces for minimizing RF loss in GaN-on-Si HEMTs
(2024) CS Mantech — Location: Tucson, AZ, USA (20.May.2024)
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- Abstract
- GaN-on-Si RF devices offer considerable cost benefit compared to market-adopted GaN-on-SiC devices. Beside a high gain, low RF loss is key for GaN-on-Si RF market penetration. The inherent conductivity of the Si substrate does not leave any freedom for additionally introduced conductivity by epitaxy or process. By controlling the condition of the epitaxial process chamber and the initial growth process conditions, we will demonstrate depleted AlN/Si interfaces that show record-low RF loss.
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Citations
Hahn, H., Mauder, C., Marx, M., Gao, Z., Lauffer, P., Schön, O., John, P. T., Yadav, S., Banerjee, S., Cardinael, P., Raskin, J.-P., Parvais, B., & Fahle, D. (2024). Depleted AlN/Si interfaces for minimizing RF loss in GaN-on-Si HEMTs. CS Mantech 2024 Digest, 1-4. https://hdl.handle.net/2078.5/236007 (Original work published 2024)