Graphene nanomesh transistor with high on/off ratio and good saturation behavior

Berrada, Salim;Nguyen, Viet-Hung;et al.
(2013) Applied Physics Letters — Vol. 103, n° 18, p. 183509 (2013)

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  • Université Paris Sud

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Berrada, S., Nguyen, V.-H., & et al. (2013). Graphene nanomesh transistor with high on/off ratio and good saturation behavior. Applied Physics Letters, 103(18), 183509. https://doi.org/10.1063/1.4828496 (Original work published 2013)