Analysis of anomalous C-V behavior for extracting the traps density in the undoped polysilicon with a double-BOX structure
(2024) Solid-State Electronics — Vol. 217, n° n/, p. 108946 (2024)
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- Abstract
- A new Double-BOX structure is introduced to reveal the electrical properties of undoped polysilicon used to enhance the performance of radio frequency SOI substrates. A plateau is clearly observed in the capacitance–voltage (C-V) characteristics, which is due to the influence of the potential barrier formed at the grain boundary. A tangential approximation method based on a three-element circuit model is proposed for correcting the measured C-V curve. With the corrected C-V curve, the effective trap density distribution in polysilicon is determined for each frequency.
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Citations
Huang, Y., Yan, Y., Nabet, M., Liu, F., Li, B., Li, B., Han, Z., Cristoloveanu, S., & Raskin, J.-P. (2024). Analysis of anomalous C-V behavior for extracting the traps density in the undoped polysilicon with a double-BOX structure. Solid-State Electronics, 217(n/), 108946. https://hdl.handle.net/2078.5/242564 (Original work published 2024)