Accurate SOI MOSFET characterisation at microwave frequencies for device performance optimisation and analogue modeling
(1998) IEEE Transactions on Electron Devices — Vol. 45, n° 5, p. 1017-1025 (1998)
Files
Extraction_method_ED.pdf
Open Access - Adobe PDF
- 312.94 KB
Details
- Authors
- Abstract
- The maturation of low-cost silicon-on-insulator (SOI) MOSFET technology in the microwave domain has brought about a need to develop specific characterization techniques. An original scheme is presented, which, by combining careful design of probing and calibration structures, rigorous in situ calibration, and a new powerful direct extraction method, allows reliable identification of the parameters of the non-quasi-static (NQS) small-signal model for MOSFET’s. The extracted model is shown to be valid up to 40 GHz.
- Affiliations
Citations
Raskin, J.-P., Gillon, R., Chen, J., Vanhoenacker-Janvier, D., & Collinge, J.-P. (1998). Accurate SOI MOSFET characterisation at microwave frequencies for device performance optimisation and analogue modeling. IEEE Transactions on Electron Devices, 45(5), 1017-1025. https://hdl.handle.net/2078.5/115711 (Original work published 1998)