A Family of Current References Based on 2T Voltage References: Demonstration in 0.18-μm With 0.1-nA PTAT and 1.1-μA CWT 38-ppm/°C Designs

Lefebvre, Martin;Bol, David
(2022) IEEE Transactions on Circuits and Systems I: Regular Papers — Vol. 69, n° 8, p. 3237-3250 (2022)

Files

Lefebvre_TCASI_2022.pdf
  • Open Access
  • Adobe PDF
  • 8.01 MB
Download

Details

Authors
Abstract
The robustness of current and voltage references to process, voltage and temperature (PVT) variations is paramount to the operation of integrated circuits in real-world conditions. However, while recent voltage references can meet most of these requirements with a handful of transistors, current references remain rather complex, requiring significant design time and silicon area. In this paper, we present a family of simple current references consisting of a two-transistor (2T) ultra-low-power voltage reference, buffered onto a voltage-to-current converter by a single transistor. Two topologies are fabricated in a 0.18-μm partially-depleted silicon-on-insulator (SOI) technology and measured over 10 dies. First, a 7T nA-range proportional-to-absolute-temperature (PTAT) reference intended for constant-gₘ biasing of subthreshold operational amplifiers demonstrates a 0.096-nA current with a line sensitivity (LS) of 1.48 %/V, a temperature coefficient (TC) of 0.75 %/°C, and a variability (σ/μ) of 1.66 %. Then, two 4T+1R μA-range constant-with-temperature (CWT) references with (resp. without) TC calibration exhibit a 1.09-μA (resp. 0.99-μA) current with a 0.21-%/V (resp. 0.20-%/V) LS, a 38-ppm/°C (resp. 290-ppm/°C) TC, and a 0.87-% (resp. 0.65-%) (σ/μ). In addition, portability to common scaled CMOS technologies, such as 65-nm bulk and 28-nm fully-depleted SOI, is discussed and validated through post-layout simulations.
Affiliations

Citations

  • APA
  • Chicago
  • FWB

Lefebvre, M., & Bol, D. (2022). A Family of Current References Based on 2T Voltage References: Demonstration in 0.18-μm With 0.1-nA PTAT and 1.1-μA CWT 38-ppm/°C Designs. IEEE Transactions on Circuits and Systems I: Regular Papers, 69(8), 3237-3250. https://doi.org/10.1109/TCSI.2022.3172647 (Original work published 2022)