3-D numerical simulations of multi-gate MOSFETs

Chung, T. M.;Raskin, Jean-Pierre
(2005) Union Radio-Scientifique Internationale (U.R.S.I.) — Location: Palace of the Academies, Brussels (Belgium) (10.December.2004)

Files

Ursi2004_Chung.pdf
  • Open Access
  • Adobe PDF
  • 205.77 KB
Download

Details

Authors
Abstract
With transistors shrinking, problems such as short-channel effects are becoming a normal occurrence. In order to reduce this increase, and to obtain higher current drive, a good alternative is to implement the use of multiple-gate fully depleted SOI-MOSFET transistors. In this paper, we will show that these novel devices are able to overcome most of the problems and optimized operation can be obtained in the DC and AC regimes.
Affiliations

Citations

  • APA
  • Chicago
  • FWB

Chung, T. M., & Raskin, J.-P. (2005). 3-D numerical simulations of multi-gate MOSFETs. Belgian Journal of Electronics and Communications (Revue HF Tijdschrift), 55-56. https://hdl.handle.net/2078.5/228204