FinFET versus UTBB SOI - a RF perspective
(2015) 45th European Solid-State Device Conference – ESSDERC 2015 — Location: Graz (Austria) (14.September.2015)
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- Abstract
- FinFET and Ultra Thin Body and BOX (UTBB) Silicon-on-Insulator (SOI) MOSFETs are the most promising advanced devices to fulfill the International Technology Roadmap for Semiconductors (ITRS) requirements. Both devices have been intensively studied these last years. Most of the reported data concern their digital performance. In this paper, their analog/RF behavior is described and compared. Both show pretty similar characteristics in terms of transconductance, Early voltage, voltage gain, self-heating issue but UTBB outperforms FinFET in terms of cutoff frequencies thanks to their relatively lower fringing parasitic capacitances.
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Citations
Raskin, J.-P. (2015). FinFET versus UTBB SOI - a RF perspective. 45th European Solid-State Device Conference – ESSDERC 2015, 84-88. https://doi.org/10.1109/ESSDERC.2015.7324719.