Characterization of LPCVD polycrystalline silicon trap-rich based substrates for RF applications
(2021) The 31st International Conference on Defects in Semiconductors - ICDS-31 — Location: Oslo, Norway (26.July.2021)
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Vandermolen, E., Ferrandis, P., Allibert, F., Augendre, E., Nabet, M., Rack, M., Raskin, J.-P., & Cassé, M. (2021). Characterization of LPCVD polycrystalline silicon trap-rich based substrates for RF applications. The 31st International Conference on Defects in Semiconductors - ICDS-31, Oslo, Norway. https://hdl.handle.net/2078.5/237354