A systemic analysis of silicon substrates toward improvements of integrated FD-SOI circuits performance at mm-wave frequencies
(2023)
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- Authors
- Supervisors
- Raskin, Jean-Pierre
- Abstract
- The emergence and deployment of new telecommunication standards (5G then 6G) requires low-cost, high RF performance and high integration density technologies. Fully-depleted-Silicon-on-Insulator (FD-SOI) technology is ideally placed in this context, thanks to best-in-class RF performance among CMOS, low-cost, high-volume manufacturability and intrinsic advantages enabling additional configurability. This thesis adopts a systemic and parallel approach to analyze the substrate effect on integrated circuits (ICs) working at millimeter-wave (mm-wave) frequencies. In the first part, the constituting elements of ICs (substrate, active and passive elements) are studied separately, and their sensitivity to the substrate properties is analyzed. Some specific on-wafer measurement aspects are also investigated to improve the measurement accuracy. Then, building on the accumulated knowledge, the last part addresses the substrate impact at the mm-wave IC level. Overall, this thesis demonstrates that enhancing the RF substrate quality in an FD-SOI technology can lead to substantial improvement of passives and circuits at mm-wave frequencies, and therefore paves the way for potential adoption of high-resistivity substrates in future industrial UTBB FD-SOI technology.
- Affiliations
Citations
Nyssens, L. (2023). A systemic analysis of silicon substrates toward improvements of integrated FD-SOI circuits performance at mm-wave frequencies. https://hdl.handle.net/2078.5/102360